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SPECIAL FEATURE
- Our substrate heater can be integrated into a wide variety of process in vacuum or with reactive environment. Substrate heater can be used in the manufacture of electronics, optoelectronics, photonics, microelectronics, thin film production, semiconductors, applied physics.
- High Temperature Heater
Specification
2” Heater
3” Heater
Maximum temperature
950℃
950℃
Temperature stability
± 2%
± 2%
Temperature uniformity
(center circle diameter)±4℃
1.25"±4℃
2.5"
Maximum current
10 amps
10 amps
Power supply
AC / DC
AC / DC
Ramp time to 750 ℃
4 Min.
4 Min.
Ramp time to 950 ℃
12Min.
12Min.
Cool-down time
35Min.
90Min.
UHV Compatibility
yes
yes
Electrical biasing
yes
yes
- Normal Substrate Heater
Specification
2” Heater
3” Heater
Maximum temperature
550℃
550℃
Temperature stability
± 5% ± 5%
Temperature uniformity
±5℃
±5℃
Maximum current
1 amps
1 amps
Power supply
AC / DC
AC / DC
Ramp time to 550 ℃
30 Min.
30 Min.
